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Principal Semiconductor Device Engineer

Job in Somerville, Middlesex County, Massachusetts, 02145, USA
Listing for: Vertical Semiconductor
Full Time position
Listed on 2026-01-12
Job specializations:
  • Engineering
    Systems Engineer, Electrical Engineering
Salary/Wage Range or Industry Benchmark: 80000 - 100000 USD Yearly USD 80000.00 100000.00 YEAR
Job Description & How to Apply Below

1 week ago Be among the first 25 applicants

Vertical Semiconductor, a venture‑backed MIT spin‑out, is leading the development of vertical gallium nitride (GaN) power electronics to build the foundational power layer for the next generation of compute and AI.

Role Description

Vertical Semiconductor is seeking a Principal Semiconductor Device Engineer to serve as a senior technical contributor in the development and commercialization of our vertical GaN power device technology. This is a hands‑on role is intended for an engineer with around 10-20 years of semiconductor R&D experience who can operate at the intersection of device physics, process integration, and manufacturability.

In this role, you will provide deep technical leadership across device architecture, process development, modeling, and characterization, while working closely with cross‑functional partners in epitaxy, process engineering, packaging, reliability, and systems. You will play a critical role in defining device roadmaps, de‑risking technology transitions, and guiding decisions that directly impact product performance and scalability.

This position offers the opportunity to help shape a world‑changing power electronics platform at a pivotal stage, with direct influence on the company’s technical direction and long‑term success. We prefer candidates who can work from our office at Greentown Labs (Somerville, MA).

Key Responsibilities
  • Serve as atechnical subject‑matter expertfor vertical GaN and wide‑bandgap power devices across the full R&D lifecycle, from concept through early production readiness
  • Lead the definition and evolution of device architectures, performance targets, and design trade‑offs for next‑generation vertical GaN power devices
  • Drive device modeling, simulation, and analytical understanding to guide design optimization, scaling strategies, and reliability improvements
  • Plan and execute device development programs in shared fabs and external foundries, including technology transfer and process co‑development
  • Partner closely with internal and external teams onCMOS‑compatible GaN process integration, yield learning, and manufacturability
  • Provide technical leadership infailure analysis, reliability physics, and root‑cause investigations for wide‑bandgap power devices
  • Oversee and interpret on‑wafer and discrete device characterization, including DC, CV, dynamic, and high‑power testing
  • Develop and review

    GDS layouts, test structures, and evaluation vehicles to support device learning and validation
  • Support system‑level understanding through application evaluation boards, measurements, and correlation to device behavior
  • Mentor junior engineers and influence technical best practices through informal technical leadership, design reviews, and knowledge sharing
  • Contribute to IP development, publications, and external technical engagements as appropriate
Qualifications
  • PhD or equivalent industry experience in Electrical Engineering, Physics, Materials Science, or Device Engineering
  • Approximately
    15–25 years of professional R&D experience in semiconductor device development
  • Deep expertise inGaN or other wide‑bandgap semiconductors (e.g., SiC), with a strong preference for power device experience
  • Demonstrated track record of technical impact and innovation in advanced device development programs
Required Technical Skills & Experience
  • Extensive experience withpower device designin GaN and/or SiC, including vertical device concepts
  • In‑depth understanding of semiconductor manufacturing processes, integration challenges, and yield considerations
  • Proven experience working inshared fab and foundry environments, including external technology transfers
  • Strong proficiency inTCAD simulation for device physics, scaling, and optimization
  • Advanced data analysis skills using

    Python, MATLAB, or equivalent tools
  • Hands‑on experience with

    GDS layoutand test structure design
  • Expertise inwide‑bandgap power device failure analysis and reliability physics
  • Experience with on‑wafer automated DC/CV/dynamic testing and discrete component characterization
  • Ability to perform analytical calculations, simulations, design, build, and measure application evaluation boards as needed
  • Excellent…
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