Power Amplifier Designer - GaN

Power Amplifier Designer - GaN

Italy, onsite working required

We are seeking an experienced GaN Power Amplifier Designer to drive the development of next-generation communication systems. In this role, you will design, optimize, and validate high-power, high-efficiency GaN amplifiers for applications spanning cellular networks, base stations, and satellite communications. You will be part of a multidisciplinary research team working on advanced technologies in microwave and millimeter-wave domains, contributing to cutting-edge innovation in wireless systems.

• Design, simulate, and optimize GaN-based power amplifiers.
• Conduct research into emerging GaN technologies, device methodologies, and materials.
• Perform chip-level trade-off studies considering link budget, die size, and modulation schemes.
• Develop and execute lab and field test plans to validate system performance.
• Troubleshoot design and system issues to ensure reliability and performance.
• Stay up-to-date with GaN PA advances and contribute through publications, conferences, or patents.

Required:

• Master’s degree or Ph.D. in Microwave Engineering, Physics, or related field.
• Proven experience in GaN power amplifier design and analysis.
• Proficiency with industry-standard simulation tools (e.g., ADS, HFSS, Cadence).
• Strong understanding of transistor-level specifications and failure mechanisms.
• Hands-on experience with chip testing, performance validation, and troubleshooting.
• In-depth knowledge of RF PA theory, electromagnetic fields, and wireless communication protocols.
• Ability to work independently as well as in cross-functional teams.
• Excellent written and verbal communication skills.
• Experience with product-level GaN PA design.
• Published research or patents in GaN power amplifier technologies.