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Doctoral position; m​/w​/d; DCMetrology wafer level; electrical​/optical charac

Job in Germany, Pike County, Ohio, USA
Listing for: Friedrich-Alexander University Erlangen-Nurnberg
Part Time, Seasonal/Temporary position
Listed on 2026-01-20
Job specializations:
  • Research/Development
    Research Scientist
  • Engineering
    Research Scientist
Job Description & How to Apply Below
Position: Doctoral candidate position (m/w/d) (DC6) Metrology on a wafer level (electrical/optical charac[...]
Location: Germany

Organisation/Company Friedrich-Alexander University Erlangen-Nurnberg Department Materials Science Research Field Engineering » Materials engineering Researcher Profile First Stage Researcher (R1) Positions PhD Positions Final date to receive applications 31 Mar 2026 - 12:00 (Europe/Berlin) Country Germany Type of Contract Temporary Job Status Part-time Hours Per Week 30.08 Offer Starting Date 1 May 2026 Is the job funded through the EU Research Framework Programme?

Horizon Europe - MSCA Reference Number FAU-DC6 Marie Curie Grant Agreement Number  Is the Job related to staff position within a Research Infrastructure? No

Offer Description

The
Friedrich-Alexander Universität Erlangen-Nürnberg (FAU)- Crystal Growth Lab (Materials Department
6) is seeking a highly motivated candidate for a PhD position (36 months) focused on Metrology on a wafer level (structural and morphologic characterization of 3C-SiCOI stacks).

This position is part of "
Silicon carbide photonic integrated circuit (SiCPIC)", a prestigious European Doctoral Network project funded by the European Union’s
Horizon Europe
Research and Innovation Programme under the
Marie Skłodowska-Curie Action (MSCA), Grant Agreement No. .

  • International

    Collaboration:

    The PhD candidate will join an
    international team
    of 15 doctoral students across
    five European countries
    , partnering with 5 universities and one company.
  • Research Focus:All 15 PhD projects fall under the project theme of
    Silicon Carbide on Insulator (SiCOI)devices and integration for applications in classic and quantum optical telecommunication and optical sensing.

This PhD project will take place at FAU; additionally, the position includes mandatory international planned secondment and comprehensive training:

  • Freiberg Instruments, Freiberg (D)(2 months):
    Minority carrier lifetime measurements
  • CNRS, Grenoble (FR)(1 month):
    Ellipsometry
  • DTU, Lyngby (DK) (2 months):
    Optical characterization using waveguide structures
  • Training & Networking:The student will participate in
    common meetings
    with the other 14 PhD students in the network, including
    three dedicated training schools

As a participant in the SiCPIC project, the PhD student will become part of a team at FAU in the Crystal Growth Lab (Materials Department
6), with expertise in crystal growth and characterization of semiconductor materials. The activities within the project will benefit from synergies with other projects in the group as well as with other activities at the institute. The main supervisor will be Professor Peter Wellmann, FAU.

Excellent master's degree in materials science, nanotechnology, electrical engineering, physics, or a comparable field / Good written and spoken English skills / Ability to work independently and as part of an interdisciplinary team / Positive attitude, enjoyment of research, and finding new solutions.

Due to restrictive legal requirements for technology export control, project staff must be citizens of the European Union, Switzerland, Norway, Island, Japan or the USA/Canada/Australia/New Zeeland.

Specific Requirements

Previous knowledge in the field of materials synthesis and/or characterization of semiconductors is an advantage.

Experimental skills in (Low Temperature) Photoluminescence Characterization (PL).

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