Senior Principal Design Engineer

A leading semiconductor innovator is seeking a Principal Design Engineer to architect and deliver high-voltage GaN power ICs for next-generation data center power systems. This role blends deep analog and mixed-signal IC expertise with strong power electronics knowledge to drive highly efficient, high-density solutions for hyperscale infrastructure.

• Lead architecture and transistor-level design of HV GaN power ICs from concept through production.
• Design critical analog and mixed-signal blocks including gate drivers, control loops, protection, sensing, and bias circuits.
• Optimize designs for efficiency, switching speed, thermal performance, and reliability.
• Partner with device, process, packaging, and applications teams to co‑develop GaN platforms.
• Own verification, silicon validation, and product bring‑up.
• Mentor engineers and provide technical leadership across programs.
• Align IC capabilities with modern data center power architectures.

• MS/PhD in Electrical Engineering.
• ~10–15+ years in analog, mixed‑signal, or power IC design.
• Proven experience with high‑voltage power devices (ideally 400–650V+).
• Strong understanding of power conversion topologies.

• Direct GaN or wide‑bandgap experience (GaN/SiC).
• Familiarity with data center or AI server power requirements.
• Experience with packaging parasitics, high dv/dt environments, and reliability.