Postdoctoral Researcher​/Research Fellow Position in Ultrawide Bandgap; UWBG

Organisation/Company AALTO UNIVERSITY Research Field Engineering Physics Researcher Profile Recognised Researcher (R2) Established Researcher (R3) Final date to receive applications 28 Feb 2026 - 00:00 (UTC) Country Finland Type of Contract Other Job Status Full-time Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure?

No

Postdoctoral researcher or Research Fellow position in ultrawide bandgap (UWBG) power devices with MOVPE grown AlN/AlGaN

Aalto University is where science and art meet technology and business. We shape a sustainable future by making research breakthroughs in and across our disciplines, sparking the game changers of tomorrow and creating novel solutions to major global challenges. Our community is made up of 120 nationalities, 14 000 students, 400 professors and close to 5000 faculty and staff working on our dynamic campus in Espoo, Greater Helsinki, Finland.

Diversity is part of who we are, and we actively work to ensure our community’s diversity and inclusiveness. This is why we warmly encourage qualified candidates from all backgrounds to join our community.

Electronics Integration and Reliability (EILB) (Electronics Integration and Reliability | Aalto University ) is a research group at Aalto University's School of Electrical Engineering dedicated to advancing electronics through innovative materials and device design concepts. Our current research focuses on developing AlN and high–Al-content AlGaN power devices using distributed polarization doping approaches for next-generation power electronics. Our mission is to enable high-power devices with substantially higher breakdown voltages and operating temperatures than conventional counterparts.

We are currently seeking a Research Fellow or Postdoctoral Researcher with specialized expertise in the epitaxial growth and characterization of III-nitrides, particularly AlN, AlGaN, and GaN. High-quality epitaxial growth of the layers will be conducted on a variety of substrates, including silicon, silicon carbide (SiC), and aluminum nitride (AlN), utilizing Aalto University's state-of-the‑art AIXTRON MOVPE reactor. Following growth, the materials will undergo comprehensive material characterization to assess layer quality through techniques such as high‑resolution X‑ray diffraction (HRXRD), X‑ray photoelectron spectroscopy (XPS), ellipsometry, atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS).

Electrical properties will be evaluated using Hall effect measurements, capacitance‑voltage (CV) profiling, current‑voltage (IV) analysis, and deep‑level transient spectroscopy (DLTS). All the facilities are located at Ota Nano, a national research infrastructure in Finland, jointly managed by Aalto University and VTT (Ota Nano | Aalto University ). Ota Nano offers an extensive array of micro‑ and nanofabrication resources within clean‑room environments, along with high‑resolution imaging and state‑of‑the‑art characterization tools, including ultra‑low temperature possibilities for device fabrication and characterization.

This role involves contributing to various ongoing projects within our group funded by EU Chips JU, Business Finland (BF) co‑innovation, and Technology Programme Helsinki Institute of Physics such as Moore4

Power, WIBASE, and AQUES respectively. The role involves working and contributing towards several topics such as AlN polarization‑doped field effect transistors (PolFETs), thermally conductive Silicon on Insulator (SOI), AlN on silicon for single photon emitters, and vertically‑grown AlN for 3D micro‑electromechanical systems (MEMS) applications.

• Doctoral degree in a suitable area (e.g. electrical engineering, physics, or materials science)
• A strong track record of research in III‑V or III‑Nitride semiconductors and excellent understanding of semiconductor device physics
• Hands‑on experience and solid understanding of epitaxial processes, such as MOVPE or MBE
• Experience in TCAD modelling…