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Postdoctoral Research Associate in ultrawide bandgap Gallium Oxide MOCVD

Job in Bristol, Bristol County, BS1, England, UK
Listing for: Physics World
Full Time position
Listed on 2025-12-30
Job specializations:
  • Engineering
    Electrical Engineering, Research Scientist
Job Description & How to Apply Below
Position: Postdoctoral Research Associate in ultrawide bandgap Gallium Oxide MOCVD Growth

Postdoctoral Research Associate in ultrawide bandgap Gallium Oxide MOCVD Growth

Applications are invited for the role of Postdoctoral Researcher position at the Centre for Device Thermography and Reliability (CDTR), led by Professor Kuball, to provide leading contributions in the field in MOCVD growth of Gallium Oxide and related alloys, with application in next‑generation high‑voltage devices. This role focuses on developing new materials and material structures for high‑voltage electronics using MOCVD.

The CDTR is a vertically integrated research group, from semiconductor growth, materials analysis, device design, device fabrication and testing (electrical, reliability, thermal management) to packaging. A recent focus of our MOCVD research has been the growth of Ga₂O₃ on diamond and other high‑thermal conductivity substrates, to enable efficiently heat‑sunk devices. Bristol has a state‑of‑the‑art Agnitron MOCVD system for Ga₂O₃ and (AlₓGa₁₋ₓ)₂O₃ growth, with plans to expand to other oxide materials.

Alongside MOCVD growth, you will have the opportunity to access materials characterization including x‑ray diffraction, atomic force microscopy and transmission electron microscopy. Furthermore, you will access extensive device fabrication capabilities, and a device testing suite to perform advanced electrical, thermal to electric field analysis of devices, and simulation tools (ATLAS, ANSYS).

You will collaborate within our 35‑member team, our academic and industrial partners and have the opportunity to make a major impact on future power device technology.

The CDTR leads the UKRI Innovation and Knowledge Centre REWIRE and is part of Horizon Europe programmes on innovative cooling solutions for chips, as well as European Space Agency (ESA) and DARPA programmes on high‑frequency high‑power RF electronics. This position benefits from the Chair in Emerging Technologies awarded to Professor Kuball by the Royal Academy of Engineering (RAEng).

Applicants should have postgraduate (PhD) experience in Physics, Materials Science or Engineering, or be working towards one, or have equivalent professional qualification/experience, ideally with a good publication record. This position requires extensive expertise in MOCVD growth, preferably in Gallium Oxide, and in materials characterization, including AFM, XRD and Hall measurements. A willingness to work together with, and co‑supervise, PhD students will be necessary.

The position has funding for 2 years in the first instance.

Informal enquiries (not applications) to Professor M. Kuball, , tel

The University is committed to creating and sustaining a fully inclusive culture. We welcome applicants from all backgrounds and communities, especially from women and other groups currently under‑represented in our department.

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Position Requirements
10+ Years work experience
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