Standard Cell​/GPIO Design Engineer; nm Technology Node

Overview

Rapidus Corporation is developing next-generation semiconductor technologies at the 2 nm node and beyond.

We are seeking skilled engineers to join our Foundation IP Design Team
, focusing on Standard Cell and GPIO (General Purpose I/O) development.

Engineers with expertise in circuit design, layout, reliability, or DTCO are all welcome.

This position involves close collaboration with process, device, and enablement teams to deliver high-quality, high-performance IP that supports leading-edge logic technologies.

• Design and optimize standard cells and GPIO circuits (input/output buffers, level shifters, ESD structures, and special cells) for advanced technology nodes.
• Perform transistor-level circuit design and HSPICE simulations for performance, leakage, and robustness verification across PVT corners.
• Collaborate with layout engineers to ensure design rule compliance, area efficiency, and manufacturability.
• Work with process integration and DTCO teams to co-optimize transistor architectures, layout patterns, and reliability structures.
• Support characterization and model generation for timing, power, and noise modeling.
• Participate in ESD and latch-up design verification
  , ensuring compliance with foundry reliability standards.
• Analyze silicon test results and feedback for model correlation and IP quality improvement.
• Cooperate with EDA vendors and PDK teams to validate design enablement and sign-off flows.

• B.S. or M.S. in Electrical Engineering, Electronics, or Microelectronics.
• 3+ years of experience in standard cell
  , I/O, or custom circuit design for advanced CMOS nodes (≤ 5 nm preferred).
• Strong understanding of CMOS device behavior
  , low-power design techniques, and circuit optimization.
• Hands-on experience with EDA tools for schematic design, simulation, and layout verification (e.g., Cadence Virtuoso, HSPICE, Calibre).
• Familiarity with DRC/LVS/EMIR verification flows and reliability checks.
• Strong problem-solving, analytical, and cross-functional collaboration skills.
• Effective communication and documentation skills in English.

• Experience with nanosheet / GAA transistor architectures or FinFET-based IP design
  .
• Familiarity with DTCO and library automation / QA flows (Python, TCL, etc.).
• Experience with test-chip development or IP qualification (Level-1 / Level-2).
• Knowledge of characterization tools (Liberate, Silicon Smart) and Liberty model validation
  .
• Understanding of ESD protection
  , latch-up prevention, and pad ring integration
  .
• Japanese language proficiency is a plus.